发明名称 |
Method of forming a shallow trench isolation structure |
摘要 |
An embodiment of the disclosure includes a method of forming a shallow trench isolation structure. A substrate is provided. The substrate includes a top surface. A trench is formed to extend from the top surface into the substrate. The trench has sidewalls and a bottom surface. A silicon liner layer is formed on the sidewalls and the bottom surface. A flowable dielectric material is filled in the trench. An anneal process is performed to densify the flowable dielectric material and convert the silicon liner layer into a silicon oxide layer simultaneously.
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申请公布号 |
US7947551(B1) |
申请公布日期 |
2011.05.24 |
申请号 |
US20100892331 |
申请日期 |
2010.09.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SYUE SEN-HONG;HSIEH BOR CHIUAN;WANG SHIANG-BAU |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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