| 摘要 |
The process of forming a plated film according to the invention is designed such that the surface asperities of the inorganic film formed by the tracing of a standing wave occurring at the inner wall surface of the first opening in the resist at the resist pattern-formation step are reduced or eliminated. It is thus possible to form, efficiently yet in a short period of time, a high aspect-ratio plated film portion having an aspect ratio of greater than 1. In addition, the formed plated film quality is extremely improved for the absence of pores (cavities).
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