| 摘要 |
FIELD: physics. ^ SUBSTANCE: invention relates to design and technology of making optoelectronic devices and specifically to semiconductor photoelectric converters. The semiconductor photoelectric converter has areas with an n+ -p (p+-n) junction, coated with metallic contacts, and on the photosensitive surface a base region with p or n conductivity, with a deposited passivating, antireflection film. The n+ -p (p+-n) junction is in form of a plurality of periodically repeating 0.1-30 mcm wide micro-areas. The 10-300 mcm spaces between the micro-areas contain a base region with minority carrier surface recombination rate less than 100 cm/s. The distance between the levels of the n+ -p (p+-n) junction and the photosensitive surface is not greater than 50 mcm, and the width of the micro-areas is smaller than the spaces by at least 10 times. The disclosed invention seeks to increase efficiency and lower the cost of making the photoelectric converter. The invention also discloses a second version of the photoelectric converter and two versions of the method of making the photoelectric converter. ^ EFFECT: high efficiency and low cost of making the photoelectric converter. ^ 27 cl, 6 dwg |
