| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device typified by a display device having more excellent display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and adverse effects such as voltage drop, a defect in signal writing to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. <P>SOLUTION: The semiconductor device may have a structure where a wiring with low resistance is connected to a thin-film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin-film transistor using the oxide semiconductor may be surrounded by insulating films to be sealed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
