| 摘要 |
Disclosed is a semiconductor device fabrication method that comprises a fabrication process, wherein device structural patients are formed in a device formation area inside a chip formation area and wherein inspection patterns are formed in multiple inspection areas inside the aforementioned chip formation area, on the film-side of a semiconductor wafer that has a film for pattern formation, and an inspection process. The aforementioned inspection patterns have a repeating pattern with identical lines and identical spaces formed in a first inspection area among the aforementioned multiple inspection areas, and a uniform pattern without spaces formed in a second inspection area among the multiple inspection areas. The aforementioned inspection process has at least a pattern inspection process that comprises a first inspection, which uses an optical measurement method capable of measuring three-dimensional pattern shapes to measure the parameters of the repeating pattern in the aforementioned first inspection area in the direction of repetition in which the lines and spaces are repeated, and a second inspection, which uses an optical measurement method capable of measuring film thickness to measure the thickness of the uniform pattern in the aforementioned second inspection area.
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