| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier capable of performing high-efficiency operation over a wide range of output power even at a temperature variation. SOLUTION: A high frequency signal is inputted through a capacitor C1 to a base of a power amplification transistor Q0 of an RF amplifier 11, and a reference voltage applying terminal VREF1 is connected to the base through a high output bias circuit B1 including a temperature compensation circuit T1, furthermore, a reference voltage applying terminal VREF2 is connected to the base through a low output bias circuit B2 including a temperature compensation circuit T2, and bias voltages VDC to the bias circuits B1, B2 are connected in common. Furthermore, a collector of the power amplification transistor Q0 outputs a high frequency signal through a capacitor C2, and its emitter is grounded. COPYRIGHT: (C)2011,JPO&INPIT |
