发明名称 |
CONTROL GATE |
摘要 |
A method for forming a semiconductor device is disclosed. The method includes providing a substrate prepared with a second gate structure. An inter-gate dielectric is formed on the substrate and over the second gate. A first gate is also formed. The first gate is adjacent to and separated from the second gate by the inter-gate dielectric. The substrate is patterned to form a split gate structure with the first and second adjacent gates. The split gate structure is provided with an e-field equalizer adjacent to the first gate. The e-field equalizer improves uniformity of e-field across the first gate during operation.
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申请公布号 |
US2011115009(A1) |
申请公布日期 |
2011.05.19 |
申请号 |
US20090621527 |
申请日期 |
2009.11.19 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
TAN SHYUE SENG;TEO LEE WEE;YIN CHUNSHAN |
分类号 |
H01L29/788;H01L21/336;H01L21/425 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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