CHEMICAL-MECHANICAL POLISHING LIQUID, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND POLISHING METHOD USING SAID POLISHING LIQUID

摘要

Provided is a chemical-mechanical polishing liquid that contains: cerium oxide particles; an organic compound that has acetylenic bonds; and water. Said organic compound that has acetylenic bonds constitutes between 0.00001% and 0.01% of the mass of the entire chemical-mechanical polishing liquid. Also provided is a chemical-mechanical polishing liquid that contains: cerium oxide particles; an organic compound that has acetylenic bonds; either an anionic macromolecular compound obtained by polymerizing a composition that contains a monomer component which is a vinyl compound that has an anionic substituent, or a salt thereof; and water. Said organic compound that has acetylenic bonds constitutes at least 0.000001% and less than 0.05% of the mass of the entire chemical-mechanical polishing liquid.