发明名称 SEMICONDUCTOR APPARATUS
摘要 <p>A semiconductor apparatus includes a multilayer interposer substrate including a power layer as an inner layer; a plurality of connection terminals provided on one surface of the interposer substrate; and a semiconductor chip mounted on the other surface of the interposer substrate. Among power terminals, ground terminals, and signal terminals provided in the semiconductor apparatus, all the power terminals are arranged in one power area and the power area includes only the power terminals.</p>
申请公布号 WO2011058718(A1) 申请公布日期 2011.05.19
申请号 WO2010JP06472 申请日期 2010.11.02
申请人 CANON KABUSHIKI KAISHA;HOSHI, SOU 发明人 HOSHI, SOU
分类号 H01L23/498;H01L23/50 主分类号 H01L23/498
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