| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure such that electrodes can be precisely formed and a design margin is reducible. SOLUTION: The semiconductor device includes: a gate electrode 22 of a thin-film transistor; a gate insulating film 23 formed by covering the gate electrode 22; an organic semiconductor layer 24 formed on the gate insulating film 23 and forming a source region, a channel region and a drain region of the thin-film transistor; a structure 31 formed on the organic semiconductor layer 24; source drain electrodes 25 and 26 of the thin-film transistor, formed from on the gate insulating film 23 to on the organic semiconductor layer 24 outside the structure 31; and an electrode material layer 32 formed of the same material with the source drain electrodes 25 and 26 on the structure 31. COPYRIGHT: (C)2011,JPO&INPIT |
