发明名称 CHAMBER FOR PECVD
摘要 A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may be coupled to a transfer chamber with a turntable for directing the carrier to a target chamber. A loader moves substrates between the carrier and a load-lock chamber in which substrates are staged in a substantially horizontal position.
申请公布号 WO2011059750(A2) 申请公布日期 2011.05.19
申请号 WO2010US54510 申请日期 2010.10.28
申请人 APPLIED MATERIALS, INC.;OLGADO, DONALD J.K. 发明人 OLGADO, DONALD J.K.
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