| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device that reduces an influence on a device forming layer during separation through reduced steps. <P>SOLUTION: A method of manufacturing the thin-film semiconductor device includes a step of forming a separation layer of a porous layer on a semiconductor substrate by anodizing the semiconductor substrate, a step of forming a semiconductor film on the separation layer, a step of forming a semiconductor element and/or a semiconductor integrated circuit on the semiconductor film, a step of forming a cut groove in the semiconductor film from a top surface side of the semiconductor film so that a tip of the cut groove may be positioned in the semiconductor substrate or separation layer, or at an interface between the semiconductor film and separation layer, and a separation step of separating a part of a region of the semiconductor element and/or semiconductor integrated circuit from the member at the separation layer by applying heat, vibration or external force to the separation layer after the step of forming the groove. <P>COPYRIGHT: (C)2011,JPO&INPIT |
