发明名称 METHOD OF FABRICATING SINGLE CHIP FOR INTEGRATING FIELD-EFFECT TRANSISTOR INTO MEMS STRUCTURE
摘要 A method of fabricating a single chip for integrating a field-effect transistor into a microelectromechanical systems (MEMS) structure is provided. The method includes the steps of: providing a substrate having thereon at least one transistor structure, a MEMS structure and a blocking structure, wherein the blocking structure encircles the MEMS structure to separate the MEMS structure from the transistor structure; forming a masking layer for covering the transistor structure, the MEMS structure and the blocking structure; forming a patterned photoresist layer on the masking layer; performing a first etching process by using the patterned photoresist layer to remove the masking layer on the MEMS structure; and performing a second etching process by removing a portion of the MEMS structure to form a plurality of microstructures such that a relative motion among the microstructures takes place in a direction perpendicular to the substrate.
申请公布号 US2011117747(A1) 申请公布日期 2011.05.19
申请号 US20100652068 申请日期 2010.01.05
申请人 NATIONAL CHIP IMPLEMENTATION CENTER NATIONAL APPLIED RESEARCH LABORATORIES 发明人 WEY CHIN-LONG;CHIU CHIN-FONG;JUANG YING-ZONG;TSAI HANN-HUEI;TSENG SHENG-HSIANG;LIAO HSIN-HAO
分类号 H01L21/3065 主分类号 H01L21/3065
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