发明名称 |
METHOD OF FABRICATING SINGLE CHIP FOR INTEGRATING FIELD-EFFECT TRANSISTOR INTO MEMS STRUCTURE |
摘要 |
A method of fabricating a single chip for integrating a field-effect transistor into a microelectromechanical systems (MEMS) structure is provided. The method includes the steps of: providing a substrate having thereon at least one transistor structure, a MEMS structure and a blocking structure, wherein the blocking structure encircles the MEMS structure to separate the MEMS structure from the transistor structure; forming a masking layer for covering the transistor structure, the MEMS structure and the blocking structure; forming a patterned photoresist layer on the masking layer; performing a first etching process by using the patterned photoresist layer to remove the masking layer on the MEMS structure; and performing a second etching process by removing a portion of the MEMS structure to form a plurality of microstructures such that a relative motion among the microstructures takes place in a direction perpendicular to the substrate.
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申请公布号 |
US2011117747(A1) |
申请公布日期 |
2011.05.19 |
申请号 |
US20100652068 |
申请日期 |
2010.01.05 |
申请人 |
NATIONAL CHIP IMPLEMENTATION CENTER NATIONAL APPLIED RESEARCH LABORATORIES |
发明人 |
WEY CHIN-LONG;CHIU CHIN-FONG;JUANG YING-ZONG;TSAI HANN-HUEI;TSENG SHENG-HSIANG;LIAO HSIN-HAO |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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