| 摘要 |
An apparatus for effecting micro fabrication of wafer surfaces by emitting a focused ion beam thereto, in which a gas is jetted through a gas introducing pipe to an ion emitter whereby the gas is adsorbed to an emitter surface. A potential difference is applied between the emitter and an extraction electrode to extract ions. The ions are then accelerated and focused into a focused ion beam having an etching function. The focused ion beam is deflected by a deflecting electrode to form a predetermined pattern. The focused ion beam is decelerated by action of a decelerating electrode prior to impingement on a wafer under treatment. Consequently, a wafer surface is etched to define the predetermined pattern without damage to the wafer surface.
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