| 摘要 |
PURPOSE: A wafer bonding method is provided to suppress a void by reducing the surface roughness of a bonding interface between a first wafer and a second wafer. CONSTITUTION: A wafer(10) for an active layer is inserted into a CVD device. The surface of a CVD oxide layer(11) of the wafer for the active layer and the surface of a wafer(20) for a support substrate are cleaned. A buried CVD oxide layer of the thickness of 0.2 um is formed by bonding the wafer for the active layer with the wafer for the support substrate at room temperature. A bonding wafer(30) is thermally processed. An junction SOI wafer(40) including the CVD oxide layer of the thickness of 0.2 um and an active layer of the thickness of 10 um is formed on the surface of the wafer for the support substrate.
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