发明名称 |
Charge transfer semiconductor device and manufacturing method thereof |
摘要 |
A charge coupled device is manufactured by using a crystalline silicon film that is formed by growing a crystal in parallel with a substrate by utilizing the nickel element with an amorphous silicon film used as a starting film. The crystal growth direction is made coincident with the charge transfer direction. As a result, the charge coupled device is given high charge transfer efficiency.
|
申请公布号 |
US7943968(B1) |
申请公布日期 |
2011.05.17 |
申请号 |
US19970994038 |
申请日期 |
1997.12.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TERAMOTO SATOSHI |
分类号 |
H01L27/148;H01L21/00;H01L21/339;H01L29/762 |
主分类号 |
H01L27/148 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|