发明名称 |
CoSi2 Schottky diode integration in BiSMOS process |
摘要 |
Cobalt silicide (CoSi2) Schottky diodes fabricated per the current art suffer from excess leakage currents in reverse bias. In this invention, an floating p-type region encircles each anode of a CoSi2 Schottky diode comprising of one or more CoSi2 anodes. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation.
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申请公布号 |
US7943472(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20080023190 |
申请日期 |
2008.01.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PENDHARKAR SAMEER;MINDRICELU EUGEN POMPILIU |
分类号 |
H01L21/329;H01L21/20 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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