发明名称 |
Method for metallization of photovoltaic cells with multiple annealing operations |
摘要 |
Method for metallization of at least one photovoltaic cell comprising a substrate based on a semiconductor with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell. The method comprises at least the steps of: a) producing at least one metallization on the front face of the photovoltaic cell, b) a first annealing of the photovoltaic cell at a temperature between around 800° C. and 900° C., c) producing at least one metallization on the rear face of the substrate, d) a second annealing of the photovoltaic cell at a temperature between around 700° C. and 800° C.
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申请公布号 |
US7943417(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20070845871 |
申请日期 |
2007.08.28 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
RIBEYRON PIERRE JEAN;DUBOIS SEBASTIEN;ENJALBERT NICOLAS |
分类号 |
H01L21/00;H01L21/02;H01L27/14;H01L31/0232 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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