发明名称 |
AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same |
摘要 |
An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
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申请公布号 |
US7943964(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20060096986 |
申请日期 |
2006.10.16 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIWARA SHINSUKE;UEMURA TOMOKI;OKAHISA TAKUJI;UEMATSU KOJI;OKUI MANABU;NISHIOKA MUNEYUKI;HASHIMOTO SHIN |
分类号 |
H01L33/30;H01L33/32 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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