发明名称 SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR MEMORY MODULE AND SEMICONDOCTOR MEMORY SYSTEM COMPRISING THE SAME
摘要 PURPOSE: A semiconductor memory device, a semiconductor memory module and the semiconductor memory system comprising the same are provided to minimize the skew of a command/address signal and a chip selection signal by allowing a command/address reference signal and the chip selection reference signal to have different voltage. CONSTITUTION: In a semiconductor memory device, a semiconductor memory module and the semiconductor memory system comprising the same, a command / address input buffer(310) receives a command / address signal. The command / address input buffer receives a command address reference voltage signal. The command / address input buffer amplifies the difference between the command/address signal and the reference signal of the command/address signal. A chip select input buffer(320) receives a chip select signal and a chip selection reference voltage signal. The chip select input buffer amplifies the chip select signal and the chip select reference voltage signal.
申请公布号 KR20110050923(A) 申请公布日期 2011.05.17
申请号 KR20090107514 申请日期 2009.11.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SUNG, MYUNG HEE;KIM, JONG HOON
分类号 G11C7/10;G11C11/4093 主分类号 G11C7/10
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