发明名称 DUAL GATE FINFET
摘要 A circuit has a fin supported by a substrate. A source is formed at a first end of the fin and a drain is formed at a second end of the fin. A pair of independently accessible gates are laterally spaced along the fin between the source and the drain. Each gate is formed around approximately three sides of the fin.
申请公布号 US2011111565(A1) 申请公布日期 2011.05.12
申请号 US201113006734 申请日期 2011.01.14
申请人 INFINEON TECHNOLOGIES AG 发明人 NAWAZ MUHAMMAD
分类号 H01L21/336 主分类号 H01L21/336
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