发明名称 POLISHING SOLUTION FOR CMP, AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING SOLUTION FOR CMP
摘要 <p>The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate polishing method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, in which the substrate is a substrate having a palladium layer, and the CMP polishing liquid is a CMP polishing liquid containing 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles.</p>
申请公布号 KR20110049856(A) 申请公布日期 2011.05.12
申请号 KR20117005192 申请日期 2009.07.23
申请人 HITACHI CHEMICAL COMPANY, LTD. 发明人 MINAMI HISATAKA;SAISYO RYOUTA;ONO HIROSHI
分类号 C09K3/14;B24B37/04;H01L21/304 主分类号 C09K3/14
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