| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To lower a contact resistance enough without removing a carbon film. <P>SOLUTION: A carbon layer 14 of high absorption effect of laser beam is formed before forming a metal layer 15 for forming an ohmic electrode 5, and the metal layer 15 is formed thereon, and then laser annealing is performed. Thereby the metal constituting the metal layer 15 reacts with the carbon (C) constituting the carbon layer 14 and silicon (Si) or the carbon constituting an n<SP>+</SP>type substrate 1, etc. to form the ohmic electrode 5, so that there is no necessity to remove the carbon layer 14. Further, since the carbon layer 14 is used at the time of laser annealing, an absorption factor of the laser beam can be raised, and the contact resistance of the ohmic electrode 5 can be sufficiently lowered. Thus there is no necessity to remove the carbon film 14, and further the contact resistance can be sufficiently lowered. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
