| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the following problem: since a vacuum device is used to form a semiconductor layer during conventional manufacture of an amorphous type silicon thin film or a polysilicon thin film using plasma, it is difficult to form a semiconductor thin film which forms a p-n junction and a TFT selectively only at necessary parts. <P>SOLUTION: A method of manufacturing a TFT or a TFT array includes forming a channel region of n-type or p-type Si particulates covered with a reactive monomolecular film using a printing method. The Si particulates are bonded and cured via two or three monomolecular films. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
