| 摘要 |
A memory capacitor based on a field configurable ion-doped polymer is reported. The device can be dynamically and reversibly programmed to analog capacitances with low-voltage (<5 V) pulses. After the device is programmed to a specific value, its capacitance remains nonvolatile. The field configurable capacitance is attributed to the modification of ionic dopant concentrations in the polymer. The ion and dipole concentrations in the ion conductive layer can be modified when the voltage biases applied to the electrodes exceeds a threshold value and can operate as a conventional capacitor when a voltage less than the threshold value is applied. The ion conductive layer will remain at a stable value after the device is modified without applying external voltage. The device has a nonvolatile memory function even when the external voltage is turned off. The memory capacitors may be used for analog memory, nonlinear analog and neuromorphic circuits.
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