发明名称 IMPRINT LITHOGRAPHY
摘要 <p><P>PROBLEM TO BE SOLVED: To improve an alignment mark of an imprint template. <P>SOLUTION: The imprint lithography template is provided with an alignment mark, wherein the alignment mark is formed from dielectric material having a refractive index which differs from the refractive index of the imprint lithography template, the dielectric material having a thickness which is such that it provides a phase difference between alignment radiation which has passed through the dielectric material and alignment radiation which has not passed through the dielectric material. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011097051(A) 申请公布日期 2011.05.12
申请号 JP20100236003 申请日期 2010.10.21
申请人 ASML NETHERLANDS BV 发明人 KRUIJT-STEGEMAN YVONNE WENDELA;DEN BOEF ARIE JEFFREY;JEUNINK ANDRE BERNARDUS
分类号 H01L21/027;B29C33/38;B29C59/02 主分类号 H01L21/027
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