| 摘要 |
PROBLEM TO BE SOLVED: To form a spacer neither requiring the use of a substrate protective film nor generating a notch when mutual interval between projections for forming the spacer is small, the width of a groove is small, or the diameter of a hole is small. SOLUTION: In anisotropic etching when the spacer is formed, "1-(ratio of horizontal etching rate to vertical etching rate of second spacer forming film 5 in anisotropic etching)" is defined as fractional anisotropy, and "(film thickness T1 of first spacer forming film 4-film thickness T2 of second spacer forming film 5)/(film thickness T1 of first spacer forming film 4)" is defined as the film thickness incremental modulus of the first spacer forming film 4 to the second spacer forming film 5. In this case, an etching condition is adopted, where the vertical etching rate of the second spacer forming film 5 is allowed to be smaller than the vertical etching rate of the first spacer forming film 4 and also to be larger than a value obtained by multiplying the vertical etching rate of the first spacer forming film 4 by a smaller value of the fractional anisotropy and the film thickness incremental modulus. COPYRIGHT: (C)2011,JPO&INPIT
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