发明名称 |
Borderless Contacts For Semiconductor Devices |
摘要 |
In one exemplary embodiment of the invention, a method (e.g., to fabricate a semiconductor device having a borderless contact) including: forming a first gate structure on a substrate; depositing an interlevel dielectric over the first gate structure; planarizing the interlevel dielectric to expose a top surface of the first gate structure; removing at least a portion of the first gate structure; forming a second gate structure in place of the first gate structure; forming a contact area for the borderless contact by removing a portion of the interlevel dielectric; and forming the borderless contact by filling the contact area with a metal-containing material.
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申请公布号 |
US2011108930(A1) |
申请公布日期 |
2011.05.12 |
申请号 |
US20090617084 |
申请日期 |
2009.11.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;WONG KEITH KWONG HON |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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