发明名称 Gated anti-fuse in CMOS process
摘要 In a gated anti-fuse, an anode is separated from a cathode by an oxide layer and the anode or cathode voltage is controlled by the control gate of a transistor like structure connected to the anode or cathode.
申请公布号 US2011108926(A1) 申请公布日期 2011.05.12
申请号 US20090590695 申请日期 2009.11.12
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 BAHL SANDEEP R.
分类号 H01L27/06 主分类号 H01L27/06
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