A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1 10-13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.
申请公布号
WO2011055626(A1)
申请公布日期
2011.05.12
申请号
WO2010JP68234
申请日期
2010.10.12
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KOYAMA, JUN;YAMAZAKI, SHUNPEI