NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR DRIVING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory having high operation reliability and to provide a method for driving the same.

SOLUTION: In the nonvolatile semiconductor memory 1, a laminate ML obtained by alternately laminating a plurality of insulating films and a plurality of electrode films is provided on a silicon substrate. A through hole 21 extending in the laminating direction is formed in the laminate ML. Each electrode film is segmented by a plurality of control gate electrodes CG. In the through hole 21, silicon pillars 31 are embedded. The nonvolatile semiconductor memory 1 is also provided with a drive circuit 41 which supplies electric potential to the control gate electrodes CG. The diameter of the through hole 21 varies depending on the position in the laminating direction. The drive circuit 41 supplies a potential to reduce a potential difference with a silicon pillar 31 as a diameter of the through-hole 21 piercing the control gate electrode CG decreases.

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