| 摘要 |
<p>PURPOSE: A flash memory device and a cell array of a flash memory device are provided to implement a stable cell array by removing a stress and disturbance which are generated in a cell array operation. CONSTITUTION: In a flash memory device and a cell array of a flash memory device, a first gate(122) and a second gate(124) are formed on a substrate(100). The first insulating layer(112) and the second insulating layer(114) are formed under the first gate and the second gate. A source area(130) is formed in substrate between the second gate and the first gate. A third insulating layer(116) and a fourth insulating layer(118) are formed in one side of the second gate and the first gate. The third gate(126) and the fourth gate(128) are formed on the third insulating layer and fourth insulating layer.</p> |
