SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, TRANSISTOR SUBSTRATE, LIGHT EMITTING DEVICE AND DISPLAY DEVICE

摘要

A technique is disclosed to stabilize the threshold voltage of a transistor having an active layer formed of a metal oxide. The transistor includes a first metal oxide layer, a second metal oxide layer that is greater in sheet resistance than the first metal oxide layer, a pair of an input electrode and an output electrode that are electrically connected to the first metal oxide layer, and a control electrode that controls an impedance between the input electrode and the output electrode. The control electrode, the first metal oxide layer, and the second metal oxide layer are arranged in the stated order.