发明名称 Semiconductor device
摘要 To include a first X decoder constituted by a transistor whose off-leakage current has a first temperature characteristic, a pre-decoder circuit and a peripheral circuit constituted by a transistor whose off-leakage current has a second temperature characteristic, a power supply control circuit that inactivates the X decoder when a temperature exceeds a first threshold during a standby state, and a power supply control circuit that inactivates the pre-decoder and the peripheral circuit when a temperature exceeds a second threshold during the standby state. According to the present invention, whether power supply control is performed on a plurality of circuit blocks is determined based on different temperatures, therefore optimum power supply control can be performed on each of circuit blocks.
申请公布号 US7940112(B2) 申请公布日期 2011.05.10
申请号 US20100753582 申请日期 2010.04.02
申请人 ELPIDA MEMORY, INC. 发明人 OKUNO SHINYA;FURUTANI KIYOHIRO
分类号 H01L35/00;G11C7/04;H03K17/16 主分类号 H01L35/00
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