发明名称 Photomask using separated exposure technique, method of fabricating photomask, and apparatus for fabricating photomask by using the method
摘要 A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.
申请公布号 US7939223(B2) 申请公布日期 2011.05.10
申请号 US20070730454 申请日期 2007.04.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN HAK-SEUNG;CHOI SEONG-WOON;KIM BYUNG-GOOK;KIM HEE-BOM;PARK SUNG-HO
分类号 G03F1/00 主分类号 G03F1/00
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