发明名称 DRAM positive wordline voltage compensation device for array device threshold voltage and voltage compensating method thereof
摘要 The configurations of a DRAM positive wordline voltage compensation device and a voltage compensating method thereof are provided in the present invention. The proposed device includes a comparator having a first input terminal receiving a positive wordline voltage feedback signal, a second input terminal receiving a compensating reference of array device threshold voltage and an output terminal generating a first enable signal, an oscillator receiving the first enable signal and generating an oscillating signal when the first enable signal is active and a charge pump having a first input terminal receiving a second enable signal, a second input terminal receiving the oscillating signal and an output terminal generating a positive wordline voltage being a sum of a bitline high voltage, an array device threshold voltage and a voltage margin.
申请公布号 US7940549(B2) 申请公布日期 2011.05.10
申请号 US20090573486 申请日期 2009.10.05
申请人 NANYA TECHNOLOGY CORP. 发明人 STEMBRIDGE BENJAMIN JAMES;JURASEK RYAN ANDREW;PARENT RICHARD MICHAEL
分类号 G11C11/24 主分类号 G11C11/24
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