发明名称 Circuit for Trimming Voltage of a Semiconductor Memory Apparatus and Method
摘要 PURPOSE: A circuit for trimming voltage of a semiconductor memory apparatus and a method are provided to reduce the number of a switch and resistor and trim a voltage level as many as the switch and the resistor. CONSTITUTION: In a circuit for trimming voltage of a semiconductor memory apparatus and a method, a voltage range selection unit(100) comprises a first resistor and a second resistor The first and second resistors are connected between a voltage supply node and GND. Voltage range selection units(110,120) selectively output the voltage in both ends of the first or the second resistor. A voltage level selection unit outputs the voltage between both ends of the resistor as a trimming voltage.
申请公布号 KR20110047345(A) 申请公布日期 2011.05.09
申请号 KR20090103936 申请日期 2009.10.30
申请人 发明人
分类号 G11C5/14;G11C7/10 主分类号 G11C5/14
代理机构 代理人
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