| 摘要 |
PURPOSE: A silicon hetero junction solar cell and a manufacturing method thereof are provided to improve an electric property by forming a diffusion preventing layer between an amorphous silicon layer and a transparent conductive oxide layer. CONSTITUTION: A second type amorphous silicon film(530a) is formed on the front of a first type crystal silicon substrate. The second type amorphous silicon film includes a second type semiconductor material which forms a P-N junction structure with a first type semiconductor material. A first diffusion preventing layer is formed by rapid thermal anneal at 200 to 300 degrees centigrade after a TiO2 is spread on the second type amorphous silicon film. A first transparent conductive oxide layer(550a) is formed on the front of the first diffusion preventing layer. A front electrode(560a) is electrically connected to the second type amorphous silicon film. A rear electrode is electrically connected to the first type crystal silicon substrate. |
