| 摘要 |
<p>Disclosed are a resistance-variable memory device including a carbide-based solid electrolyte membrane that has stable memory at a high temperature and a manufacturing method thereof. The resistance-variable memory device includes: a lower electrode, the carbide-based solid electrolyte membrane arranged on the lower electrode, and an upper electrode arranged on the solid electrolyte membrane. In addition, the method for manufacturing the resistance-variable memory device comprises: a step for forming the lower electrode on a substrate, a step for forming the carbide-based solid electrolyte membrane on the lower electrode, and a step for forming the upper electrode on the solid electrolyte membrane.</p> |
