SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce a leakage current of a capacitive element formed with an MISFET. SOLUTION: In this semiconductor integrated circuit device including a capacitive element formed with an MISFET, a capacitive element C1in an analog PLL circuit wherein the leakage current becomes a problem is formed with a p-channel type MISFET using a thick gate oxide film (9B). A power stabilization capacitive element C2uses a thin gate oxide film (9A)≤3 nm to reduce its area. The power stabilization capacitive element C2may be formed with a p-channel type MISFET or n-channel type MISFET because a gate electrode is fixed to a power supply (Vdd). COPYRIGHT: (C)2011,JPO&INPIT