| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride crystal having a practical size for fabricating devices such as high-performance light-emitting diodes or LDs, without complicating processes, without using an expensive reaction vessel and without decreasing the size of the crystal, and to provide a method and an apparatus for growing a crystal enabling to grow the group III nitride crystal. SOLUTION: When a group III nitride crystal is grown in a first reaction vessel 101 by using a mixture melt 102 containing an alkali metal and at least a group III metal and a nitrogen source material introduced from the outside of the first reaction vessel 101, vapor of the alkali metal is sealed in the first reaction vessel 101. COPYRIGHT: (C)2011,JPO&INPIT |
