| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a nitride thin film for producing a high-quality nitride thin film using ablation released ions, by which a thin film close to the stoichiometric ratio of a target can be formed in pulse laser vapor deposition of a two-component decomposable nitride ceramic material or a nitride semiconductor, and intrusion of impurities into a produced film can be suppressed as far as possible, and to provide the nitride thin film. SOLUTION: A solid nitride compound is coaxially irradiated with two laser beams having different wavelengths from each other at delayed times in a vessel maintained to a vacuum degree of 1×10<SP>-2</SP>Pa or lower, preferably 1×10<SP>-6</SP>Pa or lower, and thereby, only monovalent ions of the nitride compound are produced in a large amount without using a reactive gas, while controlling the stoichiometric ratio, and only the controlled ion species are vapor-deposited on a substrate. COPYRIGHT: (C)2011,JPO&INPIT
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