| 摘要 |
PROBLEM TO BE SOLVED: To relate to a method for manufacturing a low-defect interface between a dielectric and a group III/V compound. SOLUTION: The method includes (a) a step of preparing a substrate, including an exposed region including a first group III-V compound; (b) a step of forming at least one intermediate layer, including a second group III-V compound thereon; (c) a step of forming a group III element-rich surface by performing thermal processing for the substrate in ultrahigh vacuum so that reconstruction occurs on the surface of the second group III-V compound when a first temperature (T<SB>1</SB>) is reached; (d) a step of forming a chalcogenide passivation surface; by heating the substrate including the group III element-rich surface to a second temperature (T<SB>2</SB>) to expose the group III element-rich surface to an environment including a chalcogenide hydride gas; and (e) a step of forming a dielectric layer on the chalcogenide passivation surface and forming a passivation interface between the dielectric layer and the second group III-V compound. COPYRIGHT: (C)2011,JPO&INPIT |
