HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a heat treatment apparatus in which a large-sized substrate can be rapidly heated and rapidly cooled with high uniformity, and to provide a heat treatment method using the heat treatment apparatus.

SOLUTION: The heat treatment apparatus includes: a first chamber of which one side is opened; a second chamber of which one side is opened; a device for moving the first and second chambers; a heating device; a gas introduction port; a gas exhaust port; and a tool for longitudinally fixing a substrate, wherein the substrate is rapidly heated while the first and second chambers are connected, and rapidly cooled using a temperature difference from the outside of the chambers while separating the first and second chambers to move a heat storage portion of the heating device or the like away from the substrate. Further, the heat treatment method uses the heat treatment apparatus, and a method for manufacturing the semiconductor device using an oxide semiconductor is included.

COPYRIGHT: (C)2011,JPO&INPIT