| 摘要 |
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work functionφms of a source electrode in contact with the oxide semiconductor, the work functionφmd of a drain electrode in contact with the oxide semiconductor, and electron affinityχof the oxide semiconductor satisfyφms≰χ<φmd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.
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