发明名称 |
METHOD FOR FABRICATING MOS TRANSISTOR |
摘要 |
A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a gate and a source/drain region thereon; forming a Ni—Pt layer on surface of the gate and the source/drain region; performing a first rapid thermal process to react a portion of the Ni—Pt layer into a silicide layer; removing un-reacted nickel from the first rapid thermal process; removing un-reacted platinum from the first rapid thermal process; performing a second rapid thermal process for lowering the resistance of the silicide layer; and covering a contact etch stop layer (CESL) on the silicide layer after the second rapid thermal process.
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申请公布号 |
US2011104893(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US20090611932 |
申请日期 |
2009.11.04 |
申请人 |
ZHANG JUBAO;HU HANG;LIAO HONG |
发明人 |
ZHANG JUBAO;HU HANG;LIAO HONG |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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