| 发明名称 |
Optically-Initiated Silicon Carbide High Voltage Switch |
| 摘要 |
An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
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| 申请公布号 |
US2011101376(A1) |
申请公布日期 |
2011.05.05 |
| 申请号 |
US20100952949 |
申请日期 |
2010.11.23 |
| 申请人 |
LAWRENCE LIVERMORE NATIONAL SECURITY, LLC |
发明人 |
CAPORASO GEORGE J.;SAMPAYAN STEPHEN E.;SULLIVAN JAMES S.;SANDERS DAVID M. |
| 分类号 |
H01L31/0312;H01L31/0304 |
主分类号 |
H01L31/0312 |
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