Electrical fuse structure for use in semiconductor device in semiconductor industry, has cathode connectors coupled with cathode, where parameters of are connectors equal to or greater than two times of characteristic parameter of contact

摘要

The structure (10) a securing-connection (14) provided between an anode (16) and a cathode (12). Cathode connectors (18) are coupled with the cathode, where parameters of the connectors are equal to or greater than two times of a minimal characteristic parameter of contact coupled to an active device. Anode connectors (20) are coupled with an anode, and width of the securing-connection is equal to or greater than minimal characteristic parameter of gate electrode or width of a metallic set. A diffusion barrier is arranged in openings between a dielectric unit and a metal connector.