| 摘要 |
<p>A charge- coupled device (CCD) image sensor (300) includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region (312) of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple gates (314, 316, 318, 320) each gate being disposed over a phase, the phases3 being used to shift photo -generated charge through the horizontal CCD channel region. Distinct overflow drain regions (326) are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region.</p> |
