A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The plasma deposition apparatus includes a reaction chamber inside which a first electrode and a second electrode are installed, a first power supply unit applying a first pulsed RF signal to one of the first and second electrodes, and a second power supply unit applying a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are performed based on a predetermined deposition variable.
申请公布号
WO2010151057(A3)
申请公布日期
2011.05.05
申请号
WO2010KR04095
申请日期
2010.06.24
申请人
LG ELECTRONICS INC.;MOON, SEYOUN;KIM, WOOYOUNG;AHN, SEHWON;YOU, DONGJOO